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| SLD105VL GaAlAs Laser Diode Description The SLD105VL is a low current consumption GaAlAs laser diode developed for CD. Features * Low current consumption * Small package ( 5.6 mm) Applications * Pickup for portable CD Structure * GaAlAs double hetero structured laser diode * Pin photodiode for optical power output monitor Recommended Operating Optical Power Output 2.5 mW M-260 Absolute Maximum Ratings (Ta=25 C) * Optical power output PO 5 mV * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +60 C * Storage temperature Tstg -40 to +85 C Connection Diagram Pin Configuration COMMON 3 2 1 PD 2 1 LD 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E96Y22-TE SLD105VL Optical and Electrical Characteristics Item Threshold current Operating current Operating voltage Oscillation wavelength Monitor current Perpendicular Parallel Symmetry of // Positional Position accuracy Angle Differential efficiency Astigmatism Radiation angle S/N ratio PD dark current PD capacitance between pins (TC=25 C) Conditions PO=2.5 mW PO=2.5 mW PO=2.5 mW PO=2.5 mW VR=0 V PO=2.5 mW Min. Typ. 30 35 1.9 790 0.15 39 12 TC : Case temperature Max. 41 44 2.5 810 0.4 45 21 30 150 3 0.7 -20 Unit mA mA V nm mA degree degree % m degree mW/mA m Symbol Ith Iop Vop p Im // SR X, Y, Z D AS S/N ID CT 1.7 760 0.08 20 8 PO=2.5 mW PO=2.5 mW Z //-Z fc=720 kHz f=30 kHz PO=2.5 mW VR=5 V VR=5 V, f=1 kHz 0.2 -30 0.6 -25 85 150 30 nA pF Power SR SR = SL SR | SL - SR | SL + SR -7 0 7 || --2-- SLD105VL Example of Representative Characteristics Optical power output vs. Forward current characteristics 7 Tc=10C 20C 30C 40C 50C 60C PO=3mW, Tc=25C Far field pattern (FFP) PO-Optical power output (mW) 6 Tc=10C 60C 5 4 3 2 1 0 Relative radiant intensity // 0 0 10 0.1 20 30 40 50 0.5 IF (mA) Imon (mA) -30 0 Angle (degree) 30 0.2 0.3 0.4 IF-Forward current (mA) Threshold current vs. Temperature characteristics 100 90 80 70 60 50 40 30 Differential efficiency vs. Temperature characteristics 1.0 PO=3mW D-Differential efficiency (mW/mA) 0 20 40 60 Tc-Case temperature (C) 80 Ith-Threshold current (mA) 0.8 0.6 0.4 20 0.2 10 -20 0 -20 0 20 40 60 Tc-Case temperature (C) 80 PIN diode voltage current characteristics 0.25 PO=3mW, Tc=25C 0.800 1.000 Monitor current vs. Temperature characteristics PO=3mW Im-Monitor current (mA) 0 Voltage (V) 1.0 0.600 0.500 0.400 0.300 Current (mA) 0 0.200 -0.25 -1.0 0.100 -20 0 20 40 60 Tc-Case temperature (C) 80 --3-- SLD105VL Optical power output dependence of far field pattern (Parallel to junction) Optical power output dependence of far field pattern (Perpendicular to junction) PO=5mW PO=5mW Relative radiant intensity Relative radiant intensity PO=4mW PO=4mW PO=3mW PO=3mW PO=2mW PO=2mW -30 0 Angle (degree) 30 -30 0 Angle (degree) 30 Temperature dependence of far field pattern (Parallel to junction) PO=3mW Temperature dependence of far field pattern (Perpendicular to junction) PO=3mW Tc=60C Relative radiant intensity Relative radiant intensity Tc=50C Tc=40C Tc=60C Tc=50C Tc=40C Tc=30C Tc=20C -30 0 Angle (degree) 30 Tc=30C Tc=20C -30 0 Angle (degree) 30 --4-- SLD105VL Optical power output dependence of spectrum Tc=25C PO=5mW Relative radiant intensity PO=3mW PO=1mW 780 785 790 -Wavelength (nm) 795 800 --5-- SLD105VL Temperature dependence of spectrum PO=3mW Tc=50C Relative radiant intensity Tc=25C Tc=0C 780 785 790 -Wavelength (nm) 795 800 --6-- SLD105VL Package Outline Unit : mm M-260 Reference Slot 0.5 1.0 3 90 2 1 0 5.6 - 0.05 4.4 MAX 3.7 MAX 0.5 MIN 0.4 23 1 3 - 0.45 PCD 2.0 LD Chip & Photo Diode Optical Distance = 1.35 0.15 SONY CODE EIAJ CODE JEDEC CODE M-260 6.5 1.2 0.1 Reference Plane 2.6 MAX 1.26 0.25 PACKAGE WEIGHT 0.3g --7-- |
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